Infineon · FETs & Power MOSFETs · MPN IPI041N12N3 G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.4nF |
120V 120A 3V 300W 3.5mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS