Infineon IPI040N06N3 G

Infineon · FETs & Power MOSFETs · MPN IPI040N06N3 G

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.7nF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8nF
TypeN-Channel

Technical details

N-Channel 60V 130A 188W Through Hole TO-262-3

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