Infineon · FETs & Power MOSFETs · MPN IPI030N10N3 G
No reviews yet — be the first to review Infineon IPI030N10N3 G.
| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 69pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.8nF |
100V 100A 3.5V 300W 3mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS