Infineon · FETs & Power MOSFETs · MPN IPI029N06N
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 136A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
60V 136A 2.8V 136W 2.7mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS