Infineon · FETs & Power MOSFETs · MPN IPI024N06N3 G
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| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.7nF |
| Current - Continuous Drain(Id) | 169A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17nF |
| Type | N-Channel |
N-Channel 60V 169A 250W Through Hole TO-262-3