Infineon · FETs & Power MOSFETs · MPN IPI023NE7N3G
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| Output Capacitance(Coss) | 3.22nF |
|---|---|
| Pd - Power Dissipation | 300W |
| Configuration | - |
| Drain to Source Voltage | 75V |
| Gate Charge(Qg) | 206nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.4nF |
300W 75V 120A 3.8V 2.3mΩ@10V 1 N-channel N-Channel TO-262-3 Single FETs, MOSFETs RoHS