Infineon · FETs & Power MOSFETs · MPN IPG20N10S4L35ATMA1
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 20A |
| RDS(on) | 35mΩ@10V |
| Pd - Power Dissipation | 43W |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.105nF |
| Gate Charge(Qg) | 17.4nC@10V |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 100V 20A 43W Surface Mount TDSON-8