Infineon · FETs & Power MOSFETs · MPN IPG20N10S4L22ATMA1
No reviews yet — be the first to review Infineon IPG20N10S4L22ATMA1.
| Current - Continuous Drain(Id) | 20A |
|---|---|
| Pd - Power Dissipation | 60W |
| RDS(on) | 22mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 84pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.755nF |
| Gate Charge(Qg) | 27nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 585pF |
N-Channel Array 100V 20A 60W Surface Mount TDSON-8