Infineon IPG20N10S4L-22A

Infineon · FETs & Power MOSFETs · MPN IPG20N10S4L-22A

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)22mΩ@10V
Pd - Power Dissipation60W
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)84pF
Number2 N-Channel
Input Capacitance(Ciss)1.755nF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 100V 20A 60W Surface Mount TDSON-8

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