Infineon · FETs & Power MOSFETs · MPN IPG20N10S4L-22
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 450pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 22mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Type | N-Channel |
N-Channel Array 100V 60W Surface Mount TDSON-8