Infineon · FETs & Power MOSFETs · MPN IPG20N10S4-36A
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| Pd - Power Dissipation | 43W |
| RDS(on) | 36mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 660pF |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+175℃ |
20A 43W 36mΩ@10V 3.5V 2 N-Channel TDSON-8-4 FET, MOSFET Arrays RoHS