Infineon IPG20N10S4-36A

Infineon · FETs & Power MOSFETs · MPN IPG20N10S4-36A

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Specifications

Current - Continuous Drain(Id)20A
Pd - Power Dissipation43W
RDS(on)36mΩ@10V
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number2 N-Channel
Input Capacitance(Ciss)660pF
Gate Charge(Qg)15nC@10V
Operating Temperature-55℃~+175℃

Technical details

20A 43W 36mΩ@10V 3.5V 2 N-Channel TDSON-8-4 FET, MOSFET Arrays RoHS

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