Infineon IPG20N06S4L-26A

Infineon · FETs & Power MOSFETs · MPN IPG20N06S4L-26A

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)26mΩ@10V
Pd - Power Dissipation33W
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number2 N-Channel
Input Capacitance(Ciss)1.43nF
Gate Charge(Qg)20nC@10V
Operating Temperature-55℃~+175℃

Technical details

20A 26mΩ@10V 33W 1.7V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS

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