Infineon IPG20N06S4L-26

Infineon · FETs & Power MOSFETs · MPN IPG20N06S4L-26

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)20A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)26mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.43nF
TypeN-Channel

Technical details

N-Channel Array 60V 20A 33W Surface Mount TDSON-8

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