Infineon · FETs & Power MOSFETs · MPN IPG20N06S4L-11A
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| RDS(on) | 11.2mΩ@10V |
| Pd - Power Dissipation | 65W |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.02nF |
| Gate Charge(Qg) | 53nC@10V |
| Operating Temperature | -55℃~+175℃ |
20A 11.2mΩ@10V 65W 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS