Infineon · FETs & Power MOSFETs · MPN IPG20N06S4L-11
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 20A |
| RDS(on) | 11.2mΩ@10V |
| Pd - Power Dissipation | 65W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.02nF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 60V 20A 65W Surface Mount TDSON-8