Infineon IPG20N06S2L-50A

Infineon · FETs & Power MOSFETs · MPN IPG20N06S2L-50A

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Specifications

Current - Continuous Drain(Id)20A
Pd - Power Dissipation51W
RDS(on)50mΩ@10V
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage55V
Reverse Transfer Capacitance (Crss@Vds)68pF
Number1 N-channel
Input Capacitance(Ciss)560pF
Gate Charge(Qg)17nC@10V
Operating Temperature-55℃~+175℃

Technical details

20A 51W 50mΩ@10V 1.2V 1 N-channel TDSON-8-4 FET, MOSFET Arrays RoHS

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