Infineon IPG20N06S2L-35A

Infineon · FETs & Power MOSFETs · MPN IPG20N06S2L-35A

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Specifications

Configuration-
Current - Continuous Drain(Id)20A
RDS(on)28mΩ@10V
Pd - Power Dissipation65W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage55V
Reverse Transfer Capacitance (Crss@Vds)100pF
Number2 N-Channel
Input Capacitance(Ciss)790pF
Gate Charge(Qg)23nC@10V
Operating Temperature-55℃~+175℃

Technical details

20A 28mΩ@10V 65W 1.2V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS

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