Infineon · FETs & Power MOSFETs · MPN IPG20N06S2L-35
No reviews yet — be the first to review Infineon IPG20N06S2L-35.
| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 28mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 610pF |
| Type | N-Channel |
55V 20A 1.6V 65W 28mΩ@10V 2 N-Channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS