Infineon · FETs & Power MOSFETs · MPN IPG20N04S409AATMA1
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| Pd - Power Dissipation | 54W |
| RDS(on) | 8.6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.25nF |
| Gate Charge(Qg) | 28nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 570pF |
20A 54W 8.6mΩ@10V 4V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS