Infineon · FETs & Power MOSFETs · MPN IPG20N04S4-18A
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| Current - Continuous Drain(Id) | 20A |
|---|---|
| RDS(on) | 17.3mΩ@10V |
| Pd - Power Dissipation | 26W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 40V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 789pF |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+175℃ |
20A 17.3mΩ@10V 26W 2V 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS