Infineon IPG20N04S4-12

Infineon · FETs & Power MOSFETs · MPN IPG20N04S4-12

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Specifications

Current - Continuous Drain(Id)20A
RDS(on)12.2mΩ@10V
Pd - Power Dissipation41W
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)21pF
Number2 N-Channel
Input Capacitance(Ciss)1.47nF
Gate Charge(Qg)18nC@10V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 40V 20A 41W Surface Mount TDSON-8

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