Infineon · FETs & Power MOSFETs · MPN IPG20N04S4-09
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| Gate Charge(Qg) | 21.7nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 7.9mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
40V 20A 54W Surface Mount TDSON-8