Infineon · FETs & Power MOSFETs · MPN IPG16N10S4L-61A
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 16A |
| RDS(on) | 61mΩ@10V |
| Pd - Power Dissipation | 29W |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 845pF |
| Gate Charge(Qg) | 11nC@10V |
| Operating Temperature | -55℃~+175℃ |
16A 61mΩ@10V 29W 2 N-Channel TDSON-8 FET, MOSFET Arrays RoHS