Infineon IPG16N10S4-61

Infineon · FETs & Power MOSFETs · MPN IPG16N10S4-61

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Specifications

Current - Continuous Drain(Id)16A
Pd - Power Dissipation29W
RDS(on)61mΩ@10V
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)490pF
Gate Charge(Qg)7nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)156pF

Technical details

N-Channel 100V 16A 29W Surface Mount TDSON-8

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