Infineon · FETs & Power MOSFETs · MPN IPG16N10S4-61
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| Current - Continuous Drain(Id) | 16A |
|---|---|
| Pd - Power Dissipation | 29W |
| RDS(on) | 61mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 490pF |
| Gate Charge(Qg) | 7nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 156pF |
N-Channel 100V 16A 29W Surface Mount TDSON-8