Infineon · FETs & Power MOSFETs · MPN IPF050N10NF2SATMA1
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 117A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 5.05mΩ@10V |
| Type | N-Channel |
100V 117A 3.8V 150W 5.05mΩ@10V N-Channel TO-263-7 Single FETs, MOSFETs RoHS