Infineon · FETs & Power MOSFETs · MPN IPF039N08NF2SATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 54nC@10V |
| Current - Continuous Drain(Id) | 126A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
| Type | N-Channel |
80V 126A 3.8V 3.8W 3.9mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS