Infineon IPF024N10NF2SATMA1

Infineon · FETs & Power MOSFETs · MPN IPF024N10NF2SATMA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)154nC@10V
Current - Continuous Drain(Id)227A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.3nF

Technical details

100V 227A 3.8V 3.8W 2.4mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS

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