Infineon · FETs & Power MOSFETs · MPN IPF023N08NF2SATMA1
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| Gate Charge(Qg) | 133nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 209A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 3.2mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.2nF |
| Type | N-Channel |
80V 209A 3.8V 214W 3.2mΩ@6V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS