Infineon · FETs & Power MOSFETs · MPN IPF021N13NM6ATMA1
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| Output Capacitance(Coss) | 2.2nF |
|---|---|
| Pd - Power Dissipation | 395W |
| Drain to Source Voltage | 135V |
| Configuration | - |
| Gate Charge(Qg) | 160nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 1.8mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
395W 135V 3V 1.8mΩ@15V 1 N-channel N-Channel TO263-7 Single FETs, MOSFETs RoHS