Infineon · FETs & Power MOSFETs · MPN IPF016N10NF2SATMA1
No reviews yet — be the first to review Infineon IPF016N10NF2SATMA1.
| Gate Charge(Qg) | 241nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 274A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
| Type | N-Channel |
100V 274A 3.8V 3.8W 1.6mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS