Infineon · FETs & Power MOSFETs · MPN IPF016N06NF2SATMA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 108nC@10V |
| Current - Continuous Drain(Id) | 223A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 188W |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 60V 223A 188W TO-263-7