Infineon IPF015N10N5ATMA1

Infineon · FETs & Power MOSFETs · MPN IPF015N10N5ATMA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)210nC@10V
Output Capacitance(Coss)2.3nF
Current - Continuous Drain(Id)276A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation375W
RDS(on)1.53mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 N-channel
Input Capacitance(Ciss)16nF
TypeN-Channel

Technical details

N-Channel 100V 276A 375W Surface Mount TO-263-7-1

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