Infineon IPF013N04NF2SATMA1

Infineon · FETs & Power MOSFETs · MPN IPF013N04NF2SATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)106nC@10V
Output Capacitance(Coss)2.76nF
Current - Continuous Drain(Id)232A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)1.35mΩ@10V
Input Capacitance(Ciss)7.5nF
TypeN-Channel

Technical details

40V 232A 3.4V 188W 1.35mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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