Infineon · FETs & Power MOSFETs · MPN IPF012N06NF2SATMA1
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| Gate Charge(Qg) | 233nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 282A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 1.2mΩ@10V |
| Type | N-Channel |
60V 282A 3.3V 250W 1.2mΩ@10V N-Channel Single FETs, MOSFETs RoHS