Infineon IPF010N06NF2SATMA1

Infineon · FETs & Power MOSFETs · MPN IPF010N06NF2SATMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)305nC
Current - Continuous Drain(Id)293A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation300W
RDS(on)1.05mΩ@10V
TypeN-Channel

Technical details

60V 293A 3.3V 300W 1.05mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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