Infineon · FETs & Power MOSFETs · MPN IPF010N04NF2SATMA1
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| Gate Charge(Qg) | 239nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 289A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 250W |
| Type | N-Channel |
40V 289A 3.4V 250W N-Channel Single FETs, MOSFETs RoHS