Infineon · FETs & Power MOSFETs · MPN IPF009N04NF2SATMA1
No reviews yet — be the first to review Infineon IPF009N04NF2SATMA1.
| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 210nC@10V |
| Output Capacitance(Coss) | 5.46nF |
| Current - Continuous Drain(Id) | 302A |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 272pF |
| RDS(on) | 0.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15nF |
| Type | N-Channel |
40V 302A 3.4V 375W 0.9mΩ@10V 1 N-channel N-Channel PG-TO263-7 Single FETs, MOSFETs RoHS