Infineon · FETs & Power MOSFETs · MPN IPDQ65R125CFD7AXTMA1
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 26pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 160W |
| RDS(on) | 108mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.566nF |
650V 24A 4V 160W 108mΩ@10V 1 N-channel PG-HDSOP-22 Single FETs, MOSFETs RoHS