Infineon · FETs & Power MOSFETs · MPN IPDQ65R099CFD7XTMA1
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 39nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 32pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 186W |
| RDS(on) | 99mΩ@10V |
| Input Capacitance(Ciss) | 1.942nF |
650V 29A 4.5V 186W 99mΩ@10V HDSOP-22-1 Single FETs, MOSFETs RoHS