Infineon · FETs & Power MOSFETs · MPN IPDQ65R060CFD7XTMA1
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 272W |
| RDS(on) | 60mΩ@10V |
650V 45A 4.5V 272W 60mΩ@10V HDSOP-22-1 Single FETs, MOSFETs RoHS