Infineon · FETs & Power MOSFETs · MPN IPDQ65R029CFD7XTMA1
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| Gate Charge(Qg) | 139nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 106pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 463W |
| RDS(on) | 29mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.149nF |
| Type | N-Channel |
650V 85A 4.5V 463W 29mΩ@10V 1 N-channel N-Channel HDSOP-22-1 Single FETs, MOSFETs RoHS