Infineon · FETs & Power MOSFETs · MPN IPDQ65R017CFD7XTMA1
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| Output Capacitance(Coss) | 177pF |
|---|---|
| Pd - Power Dissipation | 694W |
| Configuration | - |
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 236nC@10V |
| Current - Continuous Drain(Id) | 136A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.338nF |
694W 650V 136A 4.5V 17mΩ@10V 1 N-channel N-Channel HDSOP-22-1 Single FETs, MOSFETs RoHS