Infineon · FETs & Power MOSFETs · MPN IPDQ60T022S7XTMA1
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| Output Capacitance(Coss) | 89pF |
|---|---|
| Pd - Power Dissipation | 416W |
| Gate Charge(Qg) | 150nC |
| Configuration | - |
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 22mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.64nF |
416W 600V 4V 22mΩ@12V 1 N-channel N-Channel SOP-22 Single FETs, MOSFETs RoHS