Infineon · FETs & Power MOSFETs · MPN IPDQ60R065S7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 51nC@12V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 195W |
| RDS(on) | 65mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.932nF |
600V 9A 4.5V 195W 65mΩ@12V 1 N-channel HDSOP-22 Single FETs, MOSFETs RoHS