Infineon · FETs & Power MOSFETs · MPN IPDQ60R040S7AXTMA1
No reviews yet — be the first to review Infineon IPDQ60R040S7AXTMA1.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 83nC@12V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 272W |
| RDS(on) | 40mΩ |
| Input Capacitance(Ciss) | 3.128nF |
| Type | N-Channel |
600V 14A 4.5V 272W 40mΩ N-Channel HDSOP-22-1 Single FETs, MOSFETs RoHS