Infineon IPDQ60R024CM8XTMA1

Infineon · FETs & Power MOSFETs · MPN IPDQ60R024CM8XTMA1

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Specifications

Output Capacitance(Coss)66pF
Pd - Power Dissipation480W
Gate Charge(Qg)122nC
Configuration-
Drain to Source Voltage600V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.382nF

Technical details

480W 600V 4.2V 20mΩ@10V 1 N-channel N-Channel PG-HDSOP-22 Single FETs, MOSFETs RoHS

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