Infineon · FETs & Power MOSFETs · MPN IPDQ60R022S7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 150nC@12V |
| Output Capacitance(Coss) | 89pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 416W |
| RDS(on) | 22mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.639nF |
| Type | N-Channel |
N-Channel 600V 24A 416W Surface Mount HDSOP-22