Infineon · FETs & Power MOSFETs · MPN IPDQ60R017S7XTMA1
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 196nC@12V |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 116pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 500W |
| RDS(on) | 17mΩ@12V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.37nF |
| Type | N-Channel |
600V 30A 4.5V 500W 17mΩ@12V 1 N-channel N-Channel HDSOP-22-1 Single FETs, MOSFETs RoHS