Infineon · FETs & Power MOSFETs · MPN IPDQ60R016CM8XTMA1
No reviews yet — be the first to review Infineon IPDQ60R016CM8XTMA1.
| Gate Charge(Qg) | 171nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 91pF |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.545nF |
600V 135A 4.2V 625W 13mΩ@10V 1 N-channel PG-HDSOP-22 Single FETs, MOSFETs RoHS