Infineon · FETs & Power MOSFETs · MPN IPDQ60R010S7XTMA1
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| Gate Charge(Qg) | 318nC@12V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 694W |
| Reverse Transfer Capacitance (Crss@Vds) | 187pF |
| RDS(on) | 10mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.987nF |
N-Channel 600V 50A 694W Surface Mount HDSOP-22